Semiconductor channel-mediated photodoping in h-BN encapsulated monolayer MoSe 2 phototransistors-Reference-Cited by-同舟云学术

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Semiconductor channel-mediated photodoping in h-BN encapsulated monolayer MoSe 2 phototransistors

Published:2019-03-22 Issue:2 Volume:6 Page:025040
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

Quereda Jorge^ORCID,Ghiasi Talieh S^ORCID,van der Wal Caspar H,van Wees Bart J

Funder

Nederlandse Organisatie voor Wetenschappelijk Onderzoek

Horizon 2020 Framework Programme

Stichting voor Fundamenteel Onderzoek der Materie

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/ab0c2d/pdf

Reference33 articles.

1. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

2. The valley Hall effect in MoS 2 transistors

3. MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap

4. Excitons in atomically thin 2D semiconductors and their applications

5. Ultrasensitive photodetectors based on monolayer MoS2

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Role of hexagonal boron nitride configuration in gate-induced hysteresis of WSe2 field-effect transistors;Current Applied Physics;2024-09

2. Self‐Forming p–n Junction Diode Realized with WSe ₂ Surface and Edge Dual Contacts;Small;2022-10-10

3. The Low-Temperature Photocurrent Spectrum of Monolayer MoSe2: Excitonic Features and Gate Voltage Dependence;Nanomaterials;2022-01-19

4. Ultrashort and metastable doping of the ZnO surface by photoexcited defects;Faraday Discussions;2022

5. Spatiotemporally Controlled Access to Photoluminescence Dark State of 2D Monolayer Semiconductor by FRAP Microscopy;Advanced Functional Materials;2021-11-21

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