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Large-area MoS 2 grown using H 2 S as the sulphur source

Published:2015-11-02 Issue:4 Volume:2 Page:044005
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

Dumcenco Dumitru,Ovchinnikov Dmitry,Lopez Sanchez Oriol,Gillet Philippe,Alexander Duncan T L,Lazar Sorin,Radenovic Aleksandra,Kis Andras

Funder

Swiss national science foundation

European Union seventh framework programme

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/2/4/044005/pdf

Reference44 articles.

1. Detailed photocurrent spectroscopy of the semiconducting group VIB transition metal dichalcogenides

2. Electronic structure of two-dimensional crystals fromab initiotheory

3. Emerging Photoluminescence in Monolayer MoS2

4. Atomically ThinMoS2: A New Direct-Gap Semiconductor

5. Influence of quantum confinement on the electronic structure of the transition metal sulfideTS2

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1. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides;Chemical Reviews;2024-08-12

2. Utilizing H2S to sulfurize transition metal and oxide barriers for suppressing resistivity scaling of ruthenium metallization;Thin Solid Films;2024-08

3. Recent advances on CO2 reduction reactions using single-atom catalysts;Renewable and Sustainable Energy Reviews;2024-02

4. Novel Nano-Electroplating-Based Plasmonic Platform for Giant Emission Enhancement in Monolayer Semiconductors;ACS Applied Materials & Interfaces;2023-12-04

5. Progress in the preparation of high-quality wafer-scale monolayer and multilayer MS2 (M = Mo; W) films by CVD;AIP Advances;2023-11-01

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