Visible and infrared photocurrent enhancement in a graphene-silicon Schottky photodetector through surface-states and electric field engineering
Author:
Funder
Royal Society
Publisher
IOP Publishing
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://iopscience.iop.org/article/10.1088/2053-1583/ab32f5/pdf
Reference28 articles.
1. Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction
2. A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?
3. Tunable Graphene–Silicon Heterojunctions for Ultrasensitive Photodetection
4. Quantum Carrier Reinvestment-Induced Ultrahigh and Broadband Photocurrent Responses in Graphene–Silicon Junctions
5. Hybrid Graphene–Si-Based Nanoscale Vacuum Field Effect Phototransistors
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