Hybrid Graphene–Si-Based Nanoscale Vacuum Field Effect Phototransistors-Reference-Cited by-同舟云学术

Hybrid Graphene–Si-Based Nanoscale Vacuum Field Effect Phototransistors

Published:2016-09-15 Issue:10 Volume:3 Page:1799-1808
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Srisonphan Siwapon¹

Affiliation:

1. Department of Electrical Engineering and Electrons and Semiconductor Applications (ELSA) Laboratory, Faculty of Engineering, Kasetsart University, 50 NgamWongWan Road, Ladyao Chatuchak, Bangkok, Thailand 10900

Funder

Thailand Research Fund

Kasetsart University

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.6b00610

Reference42 articles.

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3. Ultrafast graphene photodetector

4. Gate dependent photocurrents at a graphene p-n junction

5. Gate-Activated Photoresponse in a Graphene p–n Junction

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