Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides-Reference-Cited by-同舟云学术

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

Published:2017-04-28 Issue:2 Volume:4 Page:022003
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

Island Joshua O,Molina-Mendoza Aday J,Barawi Mariam,Biele Robert,Flores Eduardo,Clamagirand José M,Ares José R,Sánchez Carlos,van der Zant Herre S J,D’Agosta Roberto,Ferrer Isabel J,Castellanos-Gomez Andres

Funder

Mexican National Council for Science and Technology

Nederlandse Organisatie voor Wetenschappelijk Onderzoek

Ministerio de Educación, Cultura y Deporte

European Commission

Ministerio de Ciencia e Innovación

Stichting voor Fundamenteel Onderzoek der Materie

Ministerio de Economía y Competitividad

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/aa6ca6/pdf

Reference213 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

3. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

4. Photocurrent generation with two-dimensional van der Waals semiconductors

5. Black Phosphorus: Narrow Gap, Wide Applications

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