Multilayer Si shadow mask processing of wafer-scale MoS2 devices-Reference-Cited by-同舟云学术

Multilayer Si shadow mask processing of wafer-scale MoS2 devices

Published:2020-02-06 Issue:2 Volume:7 Page:025019
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

Zhang Haima,Guo Xiaojiao,Niu Wei,Xu Hu,Wu Qijuan,Liao Fuyou,Chen Jing,Tang Hongwei,Liu Hanqi,Xu Zihan,Sun Zhengzong,Qiu Zhijun,Pu Yong,Bao Wenzhong^ORCID

Funder

Oversea Researcher Innovation Program of Nanjing, NUPTSF

National Key Research and Development Program

The Innovation Research Project of Jiangsu Province

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Science and Technology Commission of Shanghai Municipality

Natural Science Foundation of the Jiangsu Higher Education Institutions of China

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/ab6b6b/pdf

Reference46 articles.

1. CMOS-compatible graphene photodetector covering all optical communication bands

2. Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

3. MoS 2 transistors with 1-nanometer gate lengths

4. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity

5. MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap

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