Resistance analysis and device design guideline for graphene RF transistors-Reference-Cited by-同舟云学术

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Resistance analysis and device design guideline for graphene RF transistors

Published:2015-07-29 Issue:3 Volume:2 Page:034011
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

Hong Seul Ki,Jeon Sang Chul,Hwang Wan Sik,Cho Byung Jin

Funder

National Research Foundation of Korea

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/2/3/034011/pdf

Reference29 articles.

1. The rise of graphene

2. Graphene transistors

3. Graphene: Electronic and Photonic Properties and Devices

4. Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm

5. High-Frequency Graphene Voltage Amplifier

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The design of a graphene nanoribbon field-effect transistor with reduced internal fringe capacitance for application in the gigahertz to terahertz frequency range;Journal of Computational Electronics;2021-10-26

2. Recent Progress in the Development of Graphene Detector for Terahertz Detection;Sensors;2021-07-22

3. Graphene field effect transistors and their applications in terahertz technology: A review;NEW CARBON MATER;2018

4. Contacting graphene in a 200 mm wafer silicon technology environment;Solid-State Electronics;2018-06

5. High-pressure oxygen annealing of Al2O3passivation layer for performance enhancement of graphene field-effect transistors;Nanotechnology;2018-01-05

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