High-pressure oxygen annealing of Al2O3passivation layer for performance enhancement of graphene field-effect transistors
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Link
http://iopscience.iop.org/article/10.1088/1361-6528/aaa0e2/pdf
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