VUV and Soft-X-Ray Photoemission Studies of Electronic and Atomic Structures of Metal-Overlayers on Silicon Surfaces
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
http://stacks.iop.org/1402-4896/1990/i=T31/a=013/pdf
Reference70 articles.
1. Empty- and Filled-Electronic States of the Si(111)\(\sqrt{3}\times \sqrt{3}\)-Sn, \(\sqrt{3}\times \sqrt{3}\)-In and \(2\sqrt{3}\times 2\sqrt{3}\)-Sn Surfaces
2. Addendum to Empty- and Filled-Electronic States of the Si(111)\(\sqrt{3}{\times}\sqrt{3}\)-Sn \(\sqrt{3}{\times}\sqrt{3}\)-In and \(2\sqrt{3} {\times} 2\sqrt{3}\)-Sn Surfaces
3. Study of Ag/Si(111) submonolayer interface
4. Atomic structure of the Cu/Si(111) interface by high-energy core-level Auger electron diffraction
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1. Study of solid surfaces using micro-electron-beams;Surface Science;1993-05
2. Photoemission studies of semiconductor interfaces: electronic structure and barrier heights;Surface Science;1992-05
3. A new method of surface structure-analysis by medium energy electron diffraction: distinction between T4 and H3 models for the Si(111)√3 × √3 -In surface;Surface Science;1992-02
4. Developments of a surface-analysis apparatus and techniques using micro-probe electron beams;Surface Science;1992-01
5. Competing processes and controlling energies at the Ag/Si(111) interface;Surface Science;1992-01
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