Annealing effects in InGaAsSb quantum wells with pentenary AlInGaAsSb barriers
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
http://stacks.iop.org/1402-4896/2006/i=T126/a=004/pdf
Reference17 articles.
1. The effects of interdiffusion on the subbands in GaxIn1−xN0.04As0.96/GaAs quantum well for 1.3 and 1.55 μm operation wavelengths
2. Effects of interdiffusion on the sub‐band‐edge structure of In0.53Ga0.47As/InP single quantum wells
3. Selective quantum-well intermixing in GaAs-AlGaAs structures using impurity-free vacancy diffusion
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1. Effect of Rapid Thermal Annealing on the Emission Properties in InGaAsSb/AlGaAsSb Multiple Quantum Wells;physica status solidi (RRL) – Rapid Research Letters;2021-05-02
2. Effect of Rapid Thermal Annealing on Luminescence Properties of InGaAsSb/AIGaAsSb Multiple Quantum Wells Material;CHIN J LASERS;2021
3. Investigation of localized state emissions in quaternary InGaAsSb/AlGaAsSb multiple quantum wells grown by molecular beam epitaxy;Optical Materials Express;2020-11-23
4. Anab initiobased approach to optical properties of semiconductor heterostructures;Modelling and Simulation in Materials Science and Engineering;2017-06-07
5. Dopant incorporation in Al 0.9 Ga 0.1 As 0.06 Sb 0.94 grown by molecular beam epitaxy;Journal of Crystal Growth;2017-04
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