Ionized cluster beam deposition and epitaxy of metal films on large lattice misfit substrates
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
http://stacks.iop.org/1402-4896/1991/i=T35/a=050/pdf
Reference10 articles.
1. ICB deposition of almost perfect large single crystal Al films on silicon substrate
2. Growth processes of epitaxial metal films on semiconductor and insulator substrates by ionized cluster beam
3. Metallization by ionized cluster beam deposition
4. Electromigration behavior of ionized cluster beam deposited aluminum films on SiO2
5. Low temperature epitaxy by ionized‐cluster beam
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1. Low temperature growth of epitaxial and highly oriented TiO2 rutile films by ICB;Laser and Ion Beam Modification of Materials;1994
2. Epitaxial Growth of TiO2Rutile Thin Films on Sapphire Substrates by a Reactive Ionized Cluster Beam Method;Japanese Journal of Applied Physics;1993-08-15
3. Low-energy Bi cluster beam deposition;Journal of Physics D: Applied Physics;1993-07-14
4. Low-energy cluster beam deposition : do you need it ?;Journal de Physique I;1993-07
5. Ionized Cluster Beams: Physics and Technology;Japanese Journal of Applied Physics;1993-05-15
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