Growth and characterization of metamorphic InxGa1−xAs/InAlAs (x⩾ 0.8) modulation doped heterostructures on GaAs using a linearly graded In(AlGa)as buffer layer-Reference-Cited by-同舟云学术

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Growth and characterization of metamorphic InxGa1−xAs/InAlAs (x⩾ 0.8) modulation doped heterostructures on GaAs using a linearly graded In(AlGa)as buffer layer

Published:1997-01-01 Issue: Volume:T69 Page:325-331
ISSN:0031-8949
Container-title:Physica Scripta
language:
Short-container-title:Phys. Scr.

Author:

Wang S M,Karlsson C,Rorsman N,Bergh M,Olsson E,Andersson T G

Publisher

IOP Publishing

Subject

Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics

Link

http://stacks.iop.org/1402-4896/1997/i=T69/a=071/pdf

Reference34 articles.

1. Extremely high gain 0.15 μm gate-length InAlAs/InGaAs/InP HEMTs

2. 650-AA self-aligned-gate pseudomorphic Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.2/In/sub 0.8/As high electron mobility transistors

3. 155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC oscillators

4. Variation of the critical layer thickness with In content in strained InxGa1−xAs‐GaAs quantum wells grown by molecular beam epitaxy

5. Anomalous strain relaxation in SiGe thin films and superlattices

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Strain on Electron Transport and Quantum Lifetimes in In_xGa_1−xAs/In_0.52Al_0.48As Modulation Doped Double Quantum Well‐Based High Electron Mobility Transistor Structures;physica status solidi (b);2024-03-03

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