The Pt/Si(111) interface and the properties of thin Pt layers on Si
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
http://stacks.iop.org/1402-4896/1994/i=T54/a=067/pdf
Reference17 articles.
1. Chemical reaction and silicide formation at the Pt/Si interface
2. d and f metal interface formation on silicon
3. Formation of the PtSi(111) interface
4. The Si(L23VV) and Pt(N7OO) lineshapes at Pt/Si interfaces and in PtSi
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. In situ resistance measurements during physical vapor deposition of ultrathin metal films on Si(111) at room temperature;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-09
2. Experimental and theoretical electronic structure determination for PtSi;Physical Review B;2003-07-30
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