Novel III/V heterostructures fabricated by metalorganic molecular beam epitaxy
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
http://stacks.iop.org/1402-4896/1994/i=T55/a=002/pdf
Reference17 articles.
1. Low threshold 0.98 μm aluminium-free strained-quantum-well InGaAs/InGaAsP/InGaP lasers
2. Evaluation of III–V growth technologies for optoelectronic applications
3. Effect of surface orientation on GaInAsP material composition in MOMBE (CBE)
4. Surface selective growth of GaInAsP heterostructures by metalorganic MBE
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1. Morphology of homo-epitaxial vicinal (100) III–V surfaces;Journal of Crystal Growth;1999-04
2. Butt-coupling loss of 0.1 dB/interface in InP/InGaAs multiple-quantum-well waveguide-waveguide structures grown by selective area chemical beam epitaxy;Semiconductor Science and Technology;1998-08-01
3. Butt-coupling loss of 0.1dB/interface in InP/InGaAs MQW waveguide-waveguide structures grown by selective area chemical beam epitaxy;Journal of Crystal Growth;1998-06
4. Anisotropic surface diffusion at crystal facet transitions during localized GaInAsP growth by MOMBE;Microelectronics Journal;1997-10
5. Facet formation and characterization of III–V structures grown on patterned surfaces;Microelectronics Journal;1997-10
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