Modulation doping in the Si/SiGe heterosystem
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
http://stacks.iop.org/1402-4896/1992/i=T45/a=037/pdf
Reference18 articles.
1. Modulation doping in GexSi1−x/Si strained layer heterostructures
2. Mobility Enhancement in Modulation‐Doped Si ‐ Si1 − x Ge x Superlattice Grown by Molecular Beam Epitaxy
3. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
4. Theoretical calculations of heterojunction discontinuities in the Si/Ge system
5. Growth and properties of Si/SiGe superlattices
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Inverted modulation-doped n-type Si/Si0.77Ge0.23 heterostructures;Microelectronic Engineering;2000-06
2. A low-temperature insulating phase at for 2D holes in high-mobility heterostructures with Landau level degeneracy;Journal of Physics: Condensed Matter;1997-02-17
3. Low temperature magnetotransport of 2D electron and hole systems in high-mobility SiSi1 − xGex heterostructures;Surface Science;1996-07
4. FQHE states of high mobility n-Si/Si1−xGex heterostructures in pulsed magnetic fields;Solid State Communications;1995-10
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