Surface energetics and ordering in GaInP
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
http://stacks.iop.org/1402-4896/1992/i=T45/a=059/pdf
Reference22 articles.
1. Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature
2. Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy
3. Observation of Strong Ordering inGaxIn1−xPalloy semiconductors
4. Atomic ordering in III/V semiconductor alloys
5. Observation of {111} ordering and [110] modulation in molecular beam epitaxial GaAs1−ySbylayers: Possible relationship to surface reconstruction occurring during layer growth
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1. Using genetic algorithms to map first-principles results to model Hamiltonians: Application to the generalized Ising model for alloys;Physical Review B;2005-10-26
2. The Nature and Origin of Atomic Ordering in Group III-V Antimonide Semiconductor Alloys;Spontaneous Ordering in Semiconductor Alloys;2002
3. Competitive evolution of the fine contrast modulation and CuPt ordering in InGaP/GaAs layers;Journal of Applied Physics;1996-10
4. Surface segregation and ordering in III-V semiconductor alloys;Physical Review B;1996-02-15
5. Optical anisotropy and spontaneous ordering inGa0.5In0.5P: An investigation using reflectance-difference spectroscopy;Physical Review B;1995-03-15
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