Evaluation of polishing-induced subsurface damage based on residual stress distribution via measured global surface deformation for thinned silicon wafers
Author:
Funder
National Natural Science Foundation of China
Publisher
IOP Publishing
Subject
Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation
Link
https://iopscience.iop.org/article/10.1088/2051-672X/ac1047/pdf
Reference33 articles.
1. Polishing pad for reducing edge roll-off while maintaining good global flatness of silicon wafer;Satake;Precis. Eng.,2020
2. Residual stress distribution in silicon wafers machined by rotational grinding;Zhou;J. Manuf. Sci. Eng.,2017
3. CC-RTSV: Cross-cellular based redundant TSV Design for 3D ICs;Ni;J. Circuits Syst. Comput.,2019
4. Morphological characterization and mechanical behavior by dicing and thinning on direct bonded Si wafer;Inoue;J. Manuf. Processes,2020
5. Surface stress evolution in through silicon via wafer during a backside thinning process;Jiang B;IEEE Trans. Semicond. Manuf.,2019
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1. Residual stress distribution of silicon wafers machined by rotational grinding based on molecular dynamics;Journal of Manufacturing Processes;2024-06
2. Origins and characterization techniques of stress in SiC crystals: A review;Progress in Crystal Growth and Characterization of Materials;2024-02
3. A review of subsurface damage detection methods for optical components;AIP Advances;2023-06-01
4. Iterative method for obtaining nonuniform grinding-induced residual stress distribution of silicon wafers based on global deformation;Materials Science in Semiconductor Processing;2022-11
5. Corrigendum: Evaluation of polishing-induced subsurface damage based on residual stress distribution via measured global surface deformation for thinned silicon wafers (2021 Surf. Topogr.: Metrol. Prop. 9 035001);Surface Topography: Metrology and Properties;2021-12-01
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