The breakdown mechanism of a high-side pLDMOS based on a thin-layer silicon-on-insulator structure
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference22 articles.
1. Analysis and Optimization of the Back-Gate Effect on Lateral High-Voltage SOI Devices
2. A novel partial silicon on insulator high voltage LDMOS with low-k dielectric buried layer
3. Novel high-voltage power device based on self-adaptive interface charge
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1. Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz–Christoffel transformation*;Chinese Physics B;2019-05-01
2. Ultra-low specific on-resistance 700V LDMOS with a buried super junction layer;Superlattices and Microstructures;2018-01
3. In-situ detection of local avalanche breakdown and large magnetoresistance in Ag/SiO2/p-Si:B/SiO2/Ag device;Journal of Applied Physics;2017-03-21
4. Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal–oxide–semiconductor field-effect transistor with low on-state resistance;Chinese Physics B;2016-02
5. Analysis of simulation approaches for the breakdown characteristics of SOI high-voltage PMOS in a fixed power supply;Superlattices and Microstructures;2015-02
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