AlGaN/GaN high electron mobility transistor with Al 2 O 3 +BCB passivation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/24/11/117307/pdf
Reference19 articles.
1. Slow transients observed in AlGaN HFETs: Effects of SiN/sub x/ passivation and UV illumination
2. Improvement of AlGaN∕GaN high electron mobility transistor structures byin situdeposition of a Si3N4 surface layer
3. Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs
4. Surface leakage currents in SiN/sub x/ passivated AlGaN/GaN HFETs
5. Effects of Sc[sub 2]O[sub 3] Surface Passivation on Deep Level Spectra of AlGaN/GaN High Electron Mobility Transistors
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Consistency of Multi-Agent Systems with Lur'e Nonlinearity in a Directed Switching Topology;2019 4th International Conference on Computational Intelligence and Applications (ICCIA);2019-06
2. Optical phonon scattering on electronic mobility in Al 2 O 3 /AlGaN/AlN/GaN heterostructures;Superlattices and Microstructures;2017-12
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