Improvement of characteristics of an InGaN light-emitting diode by using a staggered AlGaN electron-blocking layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1674-1056/22/i=1/a=018504/pdf
Reference21 articles.
1. Single InGaN nanodisk light emitting diodes as full-color subwavelength light sources
2. Growth and properties of wide spectral white light emitting diodes
3. A study on wavelength stability of GaN-based blue light emitting diodes
4. Internal quantum efficiency drop induced by the heat generation inside of light emitting diodes (LEDs)
5. A novel yellow phosphor for white light emitting diodes
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Enhancing Carrier Injection Using Graded Superlattice Electron Blocking Layer for UVB Light-Emitting Diodes;IEEE Photonics Journal;2014-12
2. Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer;Chinese Physics B;2014-02
3. Efficiency enhancement of an InGaN light-emitting diode with a p-AlGaN/GaN superlattice last quantum barrier;Chinese Physics B;2013-11
4. Controllable synthesis, characterization, and growth mechanism of hollow Zn x Cd 1− x S spheres generated by a one-step thermal evaporation method;Chinese Physics B;2013-10
5. Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer;Chinese Physics B;2013-08
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