Point defect determination by photoluminescence and capacitance—voltage characterization in a GaN terahertz Gunn diode
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1674-1056/22/i=8/a=087104/pdf
Reference21 articles.
1. Simulation of gallium nitride Gunn diodes at various doping levels and temperatures for frequencies up to 300 GHz by Monte Carlo simulation, and incorporating the effects of thermal heating
2. The use of doping spikes in GaN Gunn diodes
3. Quantitative analysis of the trapping effect on terahertz AlGaN/GaN resonant tunneling diode
4. Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes
5. First Observation of Bias Oscillations in GaN Gunn Diodes on GaN Substrate
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