Quantitative analysis of the trapping effect on terahertz AlGaN/GaN resonant tunneling diode
Author:
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3650253
Reference19 articles.
1. Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes
2. Demonstration of negative differential resistance in GaN/AlN resonant tunneling diodes at room temperature
3. Resonance and current instabilities in AlN/GaN resonant tunnelling diodes
4. Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes
5. AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition
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1. Planar AlN/GaN resonant tunneling diodes fabricated using nitrogen ion implantation;Applied Physics Letters;2023-02-06
2. Room temperature asymmetric negative differential resistance characteristics of AlGaN/GaN resonant tunneling diodes grown by metal-organic chemical vapor deposition;Solid-State Electronics;2022-01
3. Comparison of resonant tunneling diodes grown on freestanding GaN substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy*;Chinese Physics B;2021-12-01
4. Bidirectional negative differential resistance in AlN/GaN resonant tunneling diodes grown on freestanding GaN;Applied Physics Letters;2021-08-09
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