The enhancement of light-emitting efficiency using GaN-based multiple quantum well light-emitting diodes with nanopillar arrays
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1674-1056/22/i=8/a=088102/pdf
Reference26 articles.
1. Quantum Confinement Effects in Nanoscale-Thickness InAs Membranes
2. High-Efficiency InGaN/GaN Light Emitters Based on Nanophotonics and Plasmonics
3. Nanoheteroepitaxy: The Application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials
4. Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate
5. Direct comparison of catalyst-free and catalyst-induced GaN nanowires
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1. Optical Confinement Study of Laser MBE Grown InGaN/GaN Quantum Well Structure using Surface Plasmon Resonance Technique;Plasmonics;2022-01-09
2. Enhanced InGaN/GaN photoelectrodes for visible-light-driven hydrogen generation by surface roughening;physica status solidi (a);2016-05-25
3. Influences of excitation power and temperature on photoluminescence in phase-separated InGaN quantum wells;Chinese Physics B;2015-02
4. Enhancement in solar hydrogen generation efficiency using InGaN photoelectrode after surface roughening treatment with nano-sized Ni mask;Chinese Physics B;2014-09
5. Enhancing light extraction of GaN-based blue light-emitting diodes by a tuned nanopillar array;Chinese Physics B;2014-01
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