Optical Confinement Study of Laser MBE Grown InGaN/GaN Quantum Well Structure using Surface Plasmon Resonance Technique
Author:
Publisher
Springer Science and Business Media LLC
Subject
Biochemistry,Biophysics,Biotechnology
Link
https://link.springer.com/content/pdf/10.1007/s11468-021-01578-4.pdf
Reference42 articles.
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2. Cai Y, Zhu C, Jiu L et al (2018) Strain analysis of GaN HEMTs on (111) silicon with two transitional AlxGa1-xN layers. Materials (Basel) 11:12–14. https://doi.org/10.3390/ma11101968
3. Kumar M, Tekcan B, Okyay AK (2014) Atomic layer deposited HfO2 based metal insulator semiconductor GaN ultraviolet photodetectors. Curr Appl Phys 14:1703–1706. https://doi.org/10.1016/j.cap.2014.10.001
4. Turski H, Siekacz M, Muzioł G et al (2020) Nitride LEDs and lasers with buried tunnel junctions. ECS J Solid State Sci Technol 9:015018. https://doi.org/10.1149/2.0412001jss
5. Nirwal VS, Peta KR, Reddy VR, Kim MD (2017) Influence of rapid thermal annealing on electrical and structural properties of Pd/Au Schottky contact to Ga-polarity GaN grown on Si (111) substrate. J Alloys Compd 705:782–787. https://doi.org/10.1016/j.jallcom.2017.02.162
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