Comparison of the formation process and properties of epitaxial graphenes on Si- and C-face 6H—SiC substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference14 articles.
1. Top-gated graphene field-effect-transistors formed by decomposition of SiC
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3. The growth and morphology of epitaxial multilayer graphene
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5. Epitaxial graphene on SiC(0001) and \mathrm {SiC}(000\bar {1}) : from surface reconstructions to carbon electronics
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