Efficiency droop suppression in GaN-based light-emitting diodes by chirped multiple quantum well structure at high current injection
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/24/5/056806/pdf
Reference19 articles.
1. Efficiency droop in nitride-based light-emitting diodes
2. Investigation of the Nonthermal Mechanism of Efficiency Rolloff in InGaN Light-Emitting Diodes
3. Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power
4. Auger recombination rates in nitrides from first principles
5. Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer
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4. Current diffusion and efficiency droop in vertical light emitting diodes*;Chinese Physics B;2019-01-01
5. Effect of Mg-Preflow for p-AlGaN Electron Blocking Layer on the Electroluminescence of Green LEDs with V-Shaped Pits;Chinese Physics Letters;2018-02
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