Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1674-1056/22/i=4/a=047304/pdf
Reference9 articles.
1. Berkeley reliability tools-BERT
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5. Hot-carrier degradation characteristics and explanation in 0.25 μm PMOSFETs
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1. Hot Carrier Degradation in MOSFETs at Cryogenic Temperatures Down to 4.2 K;IEEE Transactions on Device and Materials Reliability;2021-12
2. Degradation induced by hot carrier and cold carrier in 65‐nm NMOSFETs with enclosed gate and two‐edged gate layouts;Micro & Nano Letters;2018-08
3. Physical hardware trojan failure analysis and detection method;Acta Physica Sinica;2016
4. Hot carrier degradation mechanism interpretation by lateral distribution of interface and bulk trap density;Current Applied Physics;2015-11
5. Anomalous Channel Length Dependence of Hot-Carrier-Induced Saturation Drain Current Degradation in n-Type MOSFETs;Chinese Physics Letters;2015-08
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