Thermal stability of HfO 2 /Si (001) films prepared by electron beam evaporation in ultrahigh vacuum using atomic oxygen
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference15 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition
3. Dielectric property and thermal stability of HfO2 on silicon
4. Thermal Stability of a Thin HfO2/Ultrathin SiO2/Si Structure: Interfacial Si Oxidation and Silicidation
5. MBE-grown high gate dielectrics of HfO2 and (Hf–Al)O2 for Si and III–V semiconductors nano-electronics
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1. Optical and Structural Characteristics of Glancing Angle Deposition Synthesized Er2O3 Nanowires;Journal of Nanoscience and Nanotechnology;2018-10-01
2. Design of ultra large negative dispersion PCF with selectively tunable liquid infiltration for dispersion compensation;Optics Communications;2014-08
3. Enhanced leakage current properties of HfO2/GaN gate dielectric stack by introducing an ultrathin buffer layer;Journal of Materials Science: Materials in Electronics;2013-10-27
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