High energy electron radiation effect on Ni and Ti/4H-SiC Schottky barrier diodes at room temperature
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference12 articles.
1. Fabrication and characteristics of lateral Ti/4H-SiC Schottky barrier diodes
2. Defect energy levels in hydrogen-implanted and electron-irradiated n-type 4H silicon carbide
3. Deep levels created by low energy electron irradiation in 4H-SiC
4. Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons
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1. Comparison of the effects of continuous and intermittent electron irradiation on commercial 4H-SiC Schottky barrier diodes;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2023-08
2. Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes;Current Applied Physics;2016-08
3. The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes;Materials Science in Semiconductor Processing;2015-11
4. Simulations and Analysis of Electrical Characteristics of 4H-SiC/Pt Schottky Barrier Diode;Materials Today: Proceedings;2015
5. Neutron radiation effect on 4H-SiC MESFETs and SBDs;Journal of Semiconductors;2010-11
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