Electrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency range
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/1/018506/pdf
Reference43 articles.
1. Study on the frequency dependence of electrical and dielectric characteristics of Au/SnO2/n-Si (MIS) structures
2. Frequency and temperature dependent dielectric properties of Al/Si3N4/p-Si(100) MIS structure
3. Influence of frequency and bias voltage on dielectric properties and electrical conductivity of Al/TiO2/p-Si/p+(MOS) structures
4. A comparative study on the electrical characteristics of Au/n-Si structures with anatase and rutile phase TiO2 interfacial insulator layer
5. Current Mechanism in -Gated Metal-Oxide-Semiconductor Devices
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1. Examination of Electrical and Dielectric Parameters of Au/n-Si Schottky Barrier Diodes (SBDs) with Organic Perylene Interlayer Using Impedance Measurements Under Various Illumination Intensities;Journal of Electronic Materials;2024-06-12
2. Investigation of the frequency effect on electrical modulus and dielectric properties of Al/p-Si structure with %0.5 Bi:ZnO interfacial layer;Ionics;2024-04-17
3. Determining the dielectric characteristics of the Au/C20H12/n-Si (MPS) structure over a wide temperature and voltage;Indian Journal of Physics;2023-11-03
4. Tuned High Dielectric Constant, Low Dielectric Loss Tangent of Novel Structure Au/PPy-MWCNTs/TiO2/Al2O3/p-Si/Al;ECS Journal of Solid State Science and Technology;2022-12-01
5. Negative resistance, capacitance in Mn/SiO2/p-Si MOS structure;Materials Research Express;2020-08-01
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