Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN x matrix by the influence of near-interface oxide traps
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/24/1/017305/pdf
Reference20 articles.
1. Silicon optical nanocrystal memory
2. Single-electron devices and their applications
3. Electron Transport in Nanocrystalline Si Based Single Electron Transistors
4. A silicon nanocrystals based memory
5. Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices*;Chinese Physics B;2016-08-02
2. Superior endurance performance of nonvolatile memory devices based on discrete storage in surface-nitrided Si nanocrystals;Journal of Applied Physics;2016-01-28
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