Superior endurance performance of nonvolatile memory devices based on discrete storage in surface-nitrided Si nanocrystals-Reference-Cited by-同舟云学术

Superior endurance performance of nonvolatile memory devices based on discrete storage in surface-nitrided Si nanocrystals

Published:2016-01-28 Issue:4 Volume:119 Page:044507
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Yu Jie¹,Chen Kunji¹,Ma Zhongyuan¹,Zhang Xinxin¹,Jiang Xiaofan¹,Huang Xinfan¹,Zhang Yongxing²,Wang Lingling²

Affiliation:

1. State Key Laboratory of Solid State Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China

2. Semiconductor Manufacturing International Corporation, Shanghai 201203, People's Republic of China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4940708

Reference27 articles.

1. Developments in nanocrystal memory

2. Si and Ge nanocrystals for future memory devices

3. A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides

4. Data retention behavior of a SONOS type two-bit storage flash memory cell

5. A novel SONOS structure of SiO/sub 2//SiN/Al/sub 2/O/sub 3/ with TaN metal gate for multi-giga bit flash memories

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1. SiGeSn Quantum Dots in HfO2 for Floating Gate Memory Capacitors;Coatings;2022-03-07

2. Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices*;Chinese Physics B;2016-08-02