1.3-μm InAs/GaAs quantum dots grown on Si substrates-Reference-Cited by-同舟云学术

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1.3-μm InAs/GaAs quantum dots grown on Si substrates

Published:2018-12 Issue:12 Volume:27 Page:128105
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Shao Fu-Hui,Zhang Yi,Su Xiang-Bin,Xie Sheng-Wen,Shang Jin-Ming,Zhao Yun-Hao,Cai Chen-Yuan,Che Ren-Chao,Xu Ying-Qiang,Ni Hai-Qiao,Niu Zhi-Chuan

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1674-1056/27/12/128105/pdf

Reference34 articles.

1. Recent progress in lasers on silicon

2. Device engineering for silicon photonics

3. Silicon Photonics

4. A Hybrid AlGaInAs–Silicon Evanescent Amplifier

5. Schottky barrier detectors on GaN for visible–blind ultraviolet detection

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers;J INFRARED MILLIM W;2020

2. State of the Art and Future Perspectives in Advanced CMOS Technology;Nanomaterials;2020-08-07

3. 1.2-um InAs/GaAs high-density quantum dot laser;14th National Conference on Laser Technology and Optoelectronics (LTO 2019);2019-05-17

4. 1.3um InAs/InGaAs QD laser steady output power over 1.07W;Third International Conference on Photonics and Optical Engineering;2019-01-24

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