Thermal stability of tungsten and tungsten nitride Schottky contacts to AlGaN/GaN
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference14 articles.
1. The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al 0.245 Ga 0.755 N/GaN heterostructure and Ni/Au Schottky contact
2. Enhancement of the Schottky Barrier Height using a Nitrogen-Rich Tungsten Nitride Thin Film for the Schottky Contacts on AlGaN/GaN Heterostructures
3. Study of Titanium Tungsten Nitride and Tungsten Nitride Schottky Contacts on n-GaN
4. Schottky contact and the thermal stability of Ni onn‐type GaN
5. Thermal annealing behaviour of Pt on n-GaN Schottky contacts
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes;Applied Surface Science;2018-12
2. Interaction between impurity nitrogen and tungsten: a first-principles investigation;Chinese Physics B;2012-01
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