Compression of the self-Q-switching in semiconductor disk lasers with single-layer graphene saturable absorbers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/9/094206/pdf
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1. Gain characteristics of the InGaAs strained quantum wells with GaAs, AlGaAs, and GaAsP barriers in vertical-external-cavity surface-emitting lasers
2. Dual-wavelength distributed Bragg reflector semiconductor laser based on a composite resonant cavity
3. Subpicosecond pulse generation from a 156 μm mode-locked VECSEL
4. 1 W at 785 nm from a frequency-doubled wafer-fused semiconductor disk laser
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