Electric-field control of perpendicular magnetic anisotropy by resistive switching via electrochemical metallization

Abstract

Electric-field control of perpendicular magnetic anisotropy (PMA) is a feasible way to manipulate perpendicular magnetization, which is of great importance for realizing energy-efficient spintronics. Here, we propose a novel approach to accomplish this task at room temperature by resistive switching (RS) via electrochemical metallization (ECM) in a device with the stack of Si/SiO2/Ta/Pt/Ag/Mn-doped ZnO (MZO)/Pt/Co/Pt/ITO. By applying certain voltages, the device could be set at high-resistance-state (HRS) and low-resistance-state (LRS), accompanied with a larger and a smaller coercivity (H C), respectively, which demonstrates a nonvolatile E-field control of PMA. Based on our previous studies and the present control experiments, the electric modulation of PMA can be briefly explained as follows. At LRS, the Ag conductive filaments form and pass through the entire MZO layer and finally reach the Pt/Co/Pt sandwich, leading to weakening of PMA and reduction of H C. In contrast, at HRS, most of the Ag filaments dissolve and leave away from the Pt/Co/Pt sandwich, causing partial recovery of PMA and an increase of H C. This work provides a new clue to designing low-power spintronic devices based on PMA films.