Perpendicular magnetic tunnel junction and its application in magnetic random access memory
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/7/077501/pdf
Reference61 articles.
1. Progress and outlook for MRAM technology
2. Recent developments in magnetic tunnel junction MRAM
3. Nanoring magnetic tunnel junction and its application in magnetic random access memory demo devices with spin-polarized current switching (invited)
4. Low-power non-volatile spintronic memory: STT-RAM and beyond
5. Advances and Future Prospects of Spin-Transfer Torque Random Access Memory
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