Energy-band alignment of atomic layer deposited (HfO 2 ) x (Al 2 O 3 ) 1 − x gate dielectrics on 4H-SiC
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/24/3/038103/pdf
Reference18 articles.
1. Effects of interface state density on 4H-SiC n-channel field-effect mobility
2. Effects of interface state density on 4H-SiC n-channel field-effect mobility
3. Status and prospects for SiC power MOSFETs
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1. High-performance MoS2 phototransistors with Hf1–x Al x O back-gate dielectric layer grown by plasma enhanced atomic layer deposition;Nanotechnology;2024-02-22
2. Modified resistive switching performance by increasing Al concentration in HfO2 on transparent indium tin oxide electrode;Ceramics International;2021-01
3. Comparative photocatalytic behavior of photocatalysts (TiO2, SiC, Bi2O3, ZnO) for transformation of glycerol to value added compounds;Korean Journal of Chemical Engineering;2019-09
4. Energy-band alignment of (HfO 2 ) x (Al 2 O 3 ) 1-x gate dielectrics deposited by atomic layer deposition on β-Ga 2 O 3 (-201);Applied Surface Science;2018-03
5. Improved interface and electrical properties of atomic layer deposited Al 2 O 3 /4H-SiC;Applied Surface Science;2018-03
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