Annealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H—SiC contacts
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/12/127302/pdf
Reference28 articles.
1. Nanoscale transport properties at silicon carbide interfaces
2. Improved Ni ohmic contact on n-type 4H-SiC
3. Nickel based ohmic contacts on SiC
4. The fabrication of nickel silicide ohmic contacts to n-type 6H-silicon carbide
5. Ti and Ti/Sb ohmic contacts on n-type 6H–SiC
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1. Lagging Thermal Annealing for Barrier Height Uniformity Evolution of Ni/4H-SiC Schottky Contacts;IEEE Transactions on Electron Devices;2024-04
2. Effect of mixed PN on the electrical characteristics of 1200V/20A 4H-SiC MPS diodes;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
3. Spectroscopic performance of Ni/4H-SiC and Ti/4H-SiC Schottky barrier diode alpha particle detectors;Journal of Instrumentation;2022-11-01
4. Performance Evaluation of W-C Alloy Schottky Contact for 4H-SiC Diodes;IEEE Transactions on Electron Devices;2022-10
5. Effects of deposition temperature on Mo/SiC Schottky contacts;AIP Advances;2022-02-01
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