High bandwidth surface-illuminated InGaAs/InP uni-travelling-carrier photodetector
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/22/11/118503/pdf
Reference14 articles.
1. Photoresponse characteristics of uni-traveling-carrier photodiodes
2. InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHz
3. InP/InGaAs uni-travelling-carrier photodiode with 220 GHz bandwidth
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1. An Equivalent Circuit Model for Uni-Traveling-Carrier Photodiode;2021 4th International Conference on Electronics and Electrical Engineering Technology;2021-12-03
2. Hybrid Plasmonic Ring-Resonator Uni-Traveling Carrier Pin-Photodetector on InGaAsP/InP Layer Stack;IEEE Transactions on Electron Devices;2020-08
3. Design guidelines for edge‐coupled waveguide unitravelling carrier photodiodes with improved bandwidth;IET Optoelectronics;2019-12
4. Effects of Interface States on Ge-On-SOI Photodiodes;IEEE Journal of the Electron Devices Society;2019
5. Optical Response Analysis of Tapered Coupled Ridge Waveguide Transistor Detector;ACTA PHOTONICA SINICA;2019
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