Improved carrier injection and confinement in InGaN light-emitting diodes containing GaN/AlGaN/GaN triangular barriers-Reference-Cited by-同舟云学术

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Improved carrier injection and confinement in InGaN light-emitting diodes containing GaN/AlGaN/GaN triangular barriers

Published:2018-08 Issue:8 Volume:27 Page:088504
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Cheng Li-Wen,Ma Jian,Cao Chang-Rui,Xu Zuo-Zheng,Lan Tian,Yang Jin-Peng,Chen Hai-Tao,Yu Hong-Yan,Wu Shu-Dong,Yao Shun,Zeng Xiang-Hua,Xu Zai-Quan

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1674-1056/27/8/088504/pdf

Reference22 articles.

1. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

2. Emerging Trends in Phosphorene Fabrication towards Next Generation Devices

3. Photonics and optoelectronics of two-dimensional materials beyond graphene

4. Present perspectives of broadband photodetectors based on nanobelts, nanoribbons, nanosheets and the emerging 2D materials

5. Efficiency droop in nitride-based light-emitting diodes

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 量子阱渐变层材料及结构对GaN基LED性能的影响;Acta Optica Sinica;2023

2. Understanding the Luminescence Characteristics of Ultraviolet InGaN/AlGaN Multiple Quantum Wells with Different In Gradients;Crystals;2021-11-15

3. Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high In content*;Chinese Physics B;2021-04-01

4. Determination of size dependent carrier capture in InGaN/GaN quantum nanowires by femto-second transient absorption spectroscopy: effect of optical phonon, electron–electron scattering and diffusion;Nanotechnology;2019-02-25

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