Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co 2 MnSi/graphene/n-Ge junction
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/25/2/027304/pdf
Reference18 articles.
1. Electrical detection of spin transport in lateral ferromagnet–semiconductor devices
2. Electrical creation of spin polarization in silicon at room temperature
3. Electrical spin injection and transport in germanium
4. Co2MnX(X=Si,Ge, Sn) Heusler compounds: Anab initiostudy of their structural, electronic, and magnetic properties at zero and elevated pressure
5. Direct observation of half-metallicity in the Heusler compound Co2MnSi
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Patterns of Grain Fragmentation During Plastic Deformation of Metals at Small to Medium Strains (Brief Review);Reviews on Advanced Materials and Technologies;2024
2. Epitaxy of half-metallic Heusler alloy Co2MnSi on Ge(111) substrate via a graphene interlayer with L21-ordered Co2MnSi;Applied Physics Letters;2022-04-18
3. Effect of substrate temperature on the morphological, structural, and optical properties of RF sputtered Ge 1− x Sn x films on Si substrate;Chinese Physics B;2017-05
4. Scanning tunneling microscopy study of h-BN thin films grown on Cu foils;Acta Physica Sinica;2016
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