Investigation of active-region doping on InAs/GaSb long wave infrared detectors*

Abstract

The eight-band k ⋅ p model is used to establish the energy band structure model of the type-II InAs/GaSb superlattice detectors with a cut-off wavelength of 10.5 μm, and the best composition of M-structure in this type of device is calculated theoretically. In addition, we have also experimented on the devices designed with the best performance to investigate the effect of the active region p-type doping temperature on the quantum efficiency of the device. The results show that the modest active region doping temperature (Be: 760 °C) can improve the quantum efficiency of the device with the best performance, while excessive doping (Be: > 760 °C) is not conducive to improving the photo response. With the best designed structure and an appropriate doping concentration, a maximum quantum efficiency of 45% is achieved with a resistance–area product of 688 Ω ⋅cm2, corresponding to a maximum detectivity of 7.35 × 1011cm ⋅ Hz1/2/W.