Author:
Feng Ruize,Wang Bo,Cao Shurui,Liu Tong,Su Yongbo,Ding Wuchang,Ding Peng,Jin Zhi
Abstract
Abstract
We fabricated a set of symmetric gate-recess devices with gate length of 70 nm. We kept the source-to-drain spacing (L
SD) unchanged, and obtained a group of devices with gate-recess length (L
recess) from 0.4 μm to 0.8 μm through process improvement. In order to suppress the influence of the kink effect, we have done SiN
X
passivation treatment. The maximum saturation current density (I
D_max) and maximum transconductance (g
m,max) increase as L
recess decreases to 0.4 μm. At this time, the device shows I
D_max=749.6 mA/mm at V
GS=0.2 V, V
DS=1.5 V, and g
m_max=1111 mS/mm at V
GS=−0.35 V, V
DS=1.5 V. Meanwhile, as L
recess increases, it causes parasitic capacitance C
gd and g
d to decrease, making f
max drastically increases. When L
recess = 0.8 μm, the device shows f
T=188 GHz and f
max=1112 GHz.
Subject
General Physics and Astronomy
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献