Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1674-1056/22/i=6/a=067203/pdf
Reference10 articles.
1. Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN∕GaN heterostructures
2. Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
3. A quasi-two-dimensional HEMT model for DC and microwave simulation
4. 2-D analytical model for current-voltage characteristics and output conductance of AlGaN/GaN MODFET
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors;Superlattices and Microstructures;2015-09
2. Influence of the channel electric field distribution on the polarization Coulomb field scattering in In 0.18 Al 0.82 N/AlN/GaN heterostructure field-effect transistors;Chinese Physics B;2014-04
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