A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well vertical-cavity surface-emitting laser
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference20 articles.
1. High-Speed, Low-Current-Density 850 nm VCSELs
2. High-Performance Zn-Diffusion 850-nm Vertical-Cavity Surface-Emitting Lasers With Strained InAlGaAs Multiple Quantum Wells
3. Low threshold current density, low resistance oxide-confined VCSEL fabricated by a dielectric-free approach
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1. Investigation of single-mode vertical-cavity surface-emitting lasers with graphene-bubble dielectric DBR;Photonics and Nanostructures - Fundamentals and Applications;2018-02
2. Power dissipation in oxide-confined 980-nm vertical-cavity surface-emitting lasers;Chinese Physics B;2013-01
3. Step instability of the In0.2Ga0.8As (001) surface during annealing;Chinese Physics B;2012-04
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