Physical modeling of direct current and radio frequency characteristics for InP-based InAlAs/InGaAs HEMTs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/25/10/108501/pdf
Reference14 articles.
1. Demonstration of a 0.48 THz Amplifier Module Using InP HEMT Transistors
2. Low power consumption millimeter-wave amplifiers using InP HEMT technology
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of temperature dependence of 2DEG on device characteristics of field‐plated recessed‐gate III‐nitride/β‐Ga2O3 nano‐HEMT;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-07
2. Displacement damage simulation of InP induced by proton and α in Low Earth Orbit;Acta Physica Sinica;2024
3. Improvement of single event effects in InP-based HEMT with a composite channel of InGaAs/InAs/InGaAs;Microelectronics Reliability;2023-05
4. Influence of double InGaAs/InAs channel on DC and RF performances of InP-based HEMTs;Journal of Ovonic Research;2022-06
5. A comparative study on radiation reliability of composite channel InP high electron mobility transistors*;Chinese Physics B;2021-07-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3