Author:
Fang Tao,Li Ling-Qi,Xia Guang-Rui,Yu Hong-Yu
Abstract
With technology computer-aided design (TCAD) simulation software, we design a new structure of gallium oxide on gallium–nitride Schottky barrier diode (SBD). The parameters of gallium oxide are defined as new material parameters in the material library, and the SBD turn-on and breakdown behavior are simulated. The simulation results reveal that this new structure has a larger turn-on current than Ga2O3 SBD and a larger breakdown voltage than GaN SBD. Also, to solve the lattice mismatch problem in the real epitaxy, we add a ZnO layer as a transition layer. The simulations show that the device still has good properties after adding this layer.
Subject
General Physics and Astronomy
Cited by
1 articles.
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