Simulation of grain boundary effect on characteristics of ZnO thin film transistor by considering the location and orientation of grain boundary
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference20 articles.
1. Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature
2. High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition
3. Low threshold voltage ZnO thin film transistor with a Zn0.7Mg0.3O gate dielectric for transparent electronics
4. Transparent thin film transistors using ZnO as an active channel layer and their electrical properties
5. Difference in magnetic properties between Co-doped ZnO powder and thin film
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