3D Simulation Investigating ZnO NWFET Characteristics-Reference-Cited by-同舟云学术

3D Simulation Investigating ZnO NWFET Characteristics

Published:2019-06 Issue: Volume:58 Page:40-48
ISSN:1661-9897
Container-title:Journal of Nano Research
language:
Short-container-title:JNanoR

Author:

Ditshego Nonofo M.J.¹^ORCID,Sultan Suhana Mohamed²

Affiliation:

1. Botswana International University of Science and Technology

2. Universiti Teknologi Malaysia

Abstract

3D Simulation was carried out and compared with fabricated ZnO NWFET. The device had the following electrical output characteristics: mobility value of 10.0 cm2/Vs at a drain voltage of 1.0 V, threshold voltage of 24 V, and subthreshold slope (SS) of 1500 mV/decade. The simulation showed that the device output results are influenced by two main issues: (i) contact resistance (Rcon ≈ 11.3 MΩ) and (ii) interface state trapped charge number density (QIT = 3.79 x 1015 cm-2). The QIT was derived from the Gaussian distribution that depends on two parameters added together. These parameters are: an acceptor-like exponential band tail function gGA(E) and an acceptor-like Gaussian deep state function gTA(E). By de-embedding the contact resistance, the simulation is able to improve the device by producing excellent field effect mobility of 126.9 cm2/Vs.

Publisher

Trans Tech Publications, Ltd.

Link

https://www.scientific.net/JNanoR.58.40.pdf

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